Summaries of Papers Presented at the Semiconductor Lasers Topical MeetingOptical Society of America, 1987 - Injection lasers |
Contents
WA ARRAYS SURFACE EMITTERS AND RELATED present some recent results on CBH GalnAsPInP | 8 |
TuB NOISE LINEWIDTH AND STABILITY 5 | 23 |
TuD4 WideBandwidth HighPower 1 3μm InGaAsP System measurements have demonstrated that the device | 25 |
Copyright | |
8 other sections not shown
Common terms and phrases
active layer active layer thickness active region angle stripe Appl bandwidth beam bias buried crescent lasers buried heterostructure carrier lifetime cavity length characteristics chemical vapor deposition cladding layer confinement layers coupling D. R. Scifres damping rate device dielectric differential quantum efficiency diffraction diode laser arrays diode lasers effects eigenmodes emitting epitaxy etched external cavity fabricated Fabry-Perot facet reflectivity field pattern function GaAs gain gain-guided arrays geometry growth heat sink heterostructure heterostructure lasers high power IEEE increase InGaAsP InGaAsP/InP injected current Laboratories laser diode laser structure lasing lateral mode lobe measured mesa metalorganic microns mirror MOCVD modulation n-InP near-field operation optical feedback oscillation output power phase Phys planar quantum efficiency Quantum Electron R. D. Burnham radiation pattern room temperature self-pulsing semiconductor lasers shown in Figure shows shunt current SiO2 spontaneous emission Streifer substrate supermode threshold current density tuning wafer waveguide wavelength width