## Simulation of Semiconductor Devices and Processes: Proceedings of an International Conference Held at University College of Swansea, Swansea, U.K. on July 9th-12th, 1984 |

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### Contents

PREFACE | 1 |

N Chan and R Dutton | 15 |

F Straker and S Selberherr | 39 |

Copyright | |

27 other sections not shown

### Common terms and phrases

algorithm analysis analytical anode applied approximation autodoping base bias bipolar transistor Boltzmann equation boron boundary conditions breakdown calculated capacitance carrier characteristics charge circuit CMOS concentration constant continuity equation derived device simulation device structure diffusion coefficient dimensional diode distribution dopant doping drain effect electric field Electron Devices emitter ETCH film finite difference finite element method function GaAs gate geometry grain boundary grid hole IEEE IEEE Trans implant impurity integral Integrated Circuits interface Ion Implantation iteration layer linear lump model mask matrix MESFET mesh microns Microwave mobility n-channel node nonlinear numerical solution obtained oxide p-body p-i-n diode P-N junction parameters particles Phys physical plasma Poisson's equation polysilicon potential problem process simulation region ROMANSII scheme semiconductor device sheet resistance shown in Figure sidewall silicon solved step substrate SUPREM-III surface techniques temperature thickness threshold voltage tion transient two-dimensional values velocity vertical VLSI width