The Behaviour of the Metal-oxide-semiconductor Field-effect Transistor in the Triode Region |
From inside the book
2 pages matching CORNELL UNIVERSITY LIBRARY in this book
Where's the rest of this book?
Results 1-2 of 2
Common terms and phrases
200 Micromho/Volt assumed carrier mobility channel constant mobility theory defined donor ions doping drain bias voltage drain conductance drain current drain junction drain saturation voltage drift field dv/dy electric field Electron Devices energy band diagram equations evaluated Experiment Predicted experimental FIELD-EFFECT TRANSISTOR gate bias given by Eq given drain bias Hall measurements Hofstein hole mobility IEEE IEEE Trans interface low gate voltages majority carriers metal electrode Milliamps mobility of carriers MOS capacitance MOS structure MOS system MOS transistor n-type Silicon normalized surface potential Øms oxide p-channel enhancement type plot Qss/Co Qtot saturation current semiconductor shown in Fig silicon dioxide substrate surface inversion layer surface mobility surface state density Texas Instruments thermal threshold voltage Trans on Electron transconductance transverse surface field triode region Unit V₂ variation VG G VG Volts voltage and surface Volts/cm ва