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Theory MOS FieldEffect Transistor
Behaviour of MOS Transistor in Triode Region
1 other sections not shown
accumulation layer assumed assumption carrier mobility channel constant mobility theory CORNELL UNIVERSITY LIBRARY donor ions drain bias voltage drain conductance drain current drain junction drain saturation voltage drift field effective electric field Electron Devices energy band diagram equations evaluated experimental FIELD-EFFECT TRANSISTOR functions of normalized gate bias given by Eq given drain bias Hall measurements Hofstein hole current hole mobility IEEE IEEE Trans low gate voltages majority carriers Master of Science metal electrode mobility of carriers MOS capacitance MOS devices MOS structure MOS system MOS transistor n-type Bulk Fig normalized surface potential Oxide n-type Bulk p-channel enhancement type plot Qtot saturation current semiconductor shown in Fig silicon silicon dioxide substrate surface inversion layer surface mobility surface state density Texas Instruments Inc threshold voltage Trans on Electron transverse field transverse surface field triode region VBVD vdth voltage and surface