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Studies of deep trapping levels in undoped and Sndoped CdJ ZnTe by thermoelectric effect
SEMICONDUCTOR AND SUPERCONDUCTOR DETECTORS
Characterization of silicon carbide detectors and dosimeters 414106
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achieved anode applications array beam bias bulk calculated carrier CdTe CdZnTe channel charge charge collection collection compared concentration corresponding Counts crystal curves dependence depth detection detector determined developed device distribution doped drift effects efficiency electron energy resolution fabrication Figure function FWHM gamma gamma-ray glass grid growth Hard hole imaging improved increase indicates interaction Italy James layer leakage current material measured method neutron noise Nucl observed obtained operating output peak performance photon Physics pixel position potential present produced properties provides pulse height radiation range readout reduce region reported resistivity respectively response sample scintillation semiconductor sensitivity shaping shown shows signal silicon single spectra spectroscopy spectrum SPIE strip surface technique temperature thermal thick trapping voltage X-ray