Nanotechnology for Microelectronics and OptoelectronicsWhen solids are reduced to the nanometer scale, they exibit new and exciting behaviours which constitute the basis for a new generation of electronic devices. Nanotechnology for Microelectronics and Optoelectronics outlines in detail the fundamental solid-state physics concepts that explain the new properties of matter caused by this reduction of solids to the nanometer scale. Applications of these electronic properties is also explored, helping students and researchers to appreciate the current status and future potential of nanotechnology as applied to the electronics industry. - Explains the behavioural changes which occur in solids at the nanoscale, making them the basis of a new generation of electronic devices - Laid out in text-reference style: a cohesive and specialised introduction to the fundamentals of nanoelectronics and nanophotonics for students and researchers alike |
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Nanotechnology for Microelectronics and Optoelectronics J. M. Martinez-Duart,Raúl J. Martín-Palma,Fernando Agulló-Rueda No preview available - 2006 |
Common terms and phrases
2D system absorption AlGaAs AlGaAs/GaAs applied atoms band diagram band structure bandgap barrier bipolar transistors Bloch calculate carrier concentration Chapter coefficient conduction band confinement consequence corresponding Coulomb crystal density doping effective mass electric field electro-optic electron wave electrons and holes emission emitter energy band energy levels equation exciton Fermi level frequency GaAs given by Eq heterojunctions hot electron III-V impurities interface IQHE k-space Landau levels lattice constant layer magnetic field material mesoscopic systems miniband modulation-doped modulators MOSFET n-type nanocrystals nanometric nanostructures observed optical properties optoelectronic optoelectronic devices oscillations p-type semiconductor Photon energy photons potential quantized quantum dot quantum Hall effect quantum heterostructures quantum mechanics quantum well lasers quantum wire resistance resonant tunnelling scattering Schrödinger equation Section shown in Figure shows silicon solid state physics spectrum subband substrate superlattice temperature transitions transport valence band values velocity voltage wave functions wave vector wavelength width
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Page 10 - Consequently, for spherical micelles one gets [11,13,16] the expression — = — — r — - — i (so kT saskT \_Rs+8 + d] where e is the electronic charge, e the dielectric constant of the...