Materials Modification by Energetic Atoms and Ions: Volume 268
Materials Research Society. Meeting Symposium, Materials Research Society. Meeting Symposium K., Kenneth S. Grabowski
Cambridge University Press, Oct 9, 1992 - Science - 405 pages
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
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ATOMIC AND MOLECULAR BEAM STUDIES OF ETCHING AND RELATED
MASS SPECTROMETRIC STUDY OF ECR MICROWAVE PLASMA ETCHING
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amorphous analysis angle annealing Appl atoms average calculated chamber chemical composition compressive stress concentration damage decrease defects density dependence deposition depth determined diffusion direction DISCUSSION distribution doping dose effect electron energy epitaxial etching experimental experiments Figure flux formation formed function GaAs grown growth higher implantation incident increase indicates initial intensity interface interstitials ion beam ion bombardment irradiation kinetic lattice layer lower mass material measured mechanisms metal method mixing nitride nitrogen normal observed obtained optical oxide oxygen parameters particles peak performed Phys plasma position potential prepared present pressure produced properties range ratio reaction reflected region reported Research resistance respectively samples scattering shown shows silicon simulations species specimen sputtering stress structure substrate surface technique temperature thermal thickness thin films values