Semiconductor Superlattices: Growth and Electronic Properties
This book surveys semiconductor superlattices, in particular their growth and electronic properties in an applied electric field perpendicular to the layers. The main developments in this field, which were achieved in the last five to seven years, are summarized. The electronic properties include transport through minibands at low electric field strengths, the Wannier-Stark localization and Bloch oscillations at intermediate electric field strengths, resonant tunneling of electrons and holes between different subbands, and the formation of electric field domains for large carrier densities at high electric field strengths.
by ALAIN SIBILLE
by HOLGER GRAHN
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40 periods 9.0 nm GaAs absorption edge Agullˇ-Rueda Appl applied electric field applied voltage approximation band bias binding energy Bloch oscillations Boltzmann equation calculated carrier density coherence length conduction band corresponding coupling dispersion relation domain boundary domain formation E.E. Mendez effective mass electric field electron-hole electrons and holes emission equation Esaki exciton excitonic effects experimental field strength four-wave mixing function FWM signal GaAs/AlAs superlattices GaAs/AlGaAs H.T. Grahn heavy-hole high-field domain I-V characteristic intensity interwell transitions J.F. Palmier lattice layer Lett levels LO-phonon magnetic field miniband transport miniband width modulator narrow minibands nm AlAs barriers observed oscillator strength p-i-n diode peak phonon photocurrent photoexcitation photoluminescence photon energy Phys Ploog quantum regime resonant tunneling Schr÷dinger equation second subband semiconductor semiconductor superlattices shown in Fig spectra Stark ladder structure subband spacing substrate superlattice period temperature undoped velocity Wannier-Stark ladder wavefunctions wide minibands