Semiconductor Superlattices: Growth and Electronic Properties
This book surveys semiconductor superlattices, in particular their growth and electronic properties in an applied electric field perpendicular to the layers. The main developments in this field, which were achieved in the last five to seven years, are summarized. The electronic properties include transport through minibands at low electric field strengths, the Wannier-Stark localization and Bloch oscillations at intermediate electric field strengths, resonant tunneling of electrons and holes between different subbands, and the formation of electric field domains for large carrier densities at high electric field strengths.
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GROWTH AND CHARACTERIZATION
by ALAIN SIBILLE
by HOLGER GRAHN
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40 periods absorption Appl applied voltage approximation band bias Bloch oscillations boundary calculated chapter coherence conduction constant corresponding coupling decreases density dependence determined device direction discussed domain doped edge effective mass effects electric field electron emission energy equation excitation exciton exhibits expected experimental experiments field strength formation function given growth higher hole I-V characteristic increasing indicated intensity interwell larger laser lattice layer leads length Lett levels light limited localization magnetic field measured miniband width narrow nm AlAs barriers nm GaAs observed obtained optical peak periods phonon photocurrent photon energy Phys points present quantum ratio regime region relation resonant tunneling respectively sample scattering semiconductor separated shift shown shows signal solid spacing spectra Stark ladder structure subband superlattice temperature thickness transition transport Wannier-Stark wavefunctions
Intersubband Transitions in Quantum Wells: Physics and Device Applications II
No preview available - 2000
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Compound Semiconductors 1999: Proceedings of the 26th International ...
K Ploog,Gunter Weimann
Limited preview - 2000