Semiconductor Superlattices: Growth and Electronic PropertiesThis book surveys semiconductor superlattices, in particular their growth and electronic properties in an applied electric field perpendicular to the layers. The main developments in this field, which were achieved in the last five to seven years, are summarized. The electronic properties include transport through minibands at low electric field strengths, the Wannier-Stark localization and Bloch oscillations at intermediate electric field strengths, resonant tunneling of electrons and holes between different subbands, and the formation of electric field domains for large carrier densities at high electric field strengths. |
Contents
GROWTH AND CHARACTERIZATION | 1 |
References | 26 |
by ALAIN SIBILLE | 29 |
References | 94 |
References | 149 |
by HOLGER GRAHN | 155 |
References | 200 |
Other editions - View all
Semiconductor Superlattices: Growth and Electronic Properties Holger T. Grahn No preview available - 1995 |
Common terms and phrases
40 periods 9.0 nm GaAs applied electric field applied voltage bias binding energy Bloch oscillations Boltzmann equation calculated carrier density coherence length conduction band corresponding coupling domain boundary domain formation drift velocity effective mass electric field electrons and holes emission Esaki exciton experimental field strength four-wave mixing FWM signal GaAs-AlAs superlattice GaAs/AlAs GaAs/AlGaAs growth heavy-hole high-field domain higher subband I-V characteristic increasing intensity intersubband interwell transitions J.F. Palmier laser lattice layers Lett levels low-field domain magnetic field miniband conduction miniband transport miniband width narrow miniband nm Alas barriers observed oscillator strength p-i-n diode parameters peak phonon photocurrent photoexcitation photoluminescence photon energy Phys PL lines Ploog quantum quantum cascade laser regime resonant tunneling sample second subband semiconductor semiconductor superlattices shift shown in Fig solid spectra Stark ladder structure subband spacing substrate superlattice with 9.0 temperature thickness wavefunctions wide minibands
