High Frequency Circuit Applications of Resonant Tunneling DiodesStanford University, 1990 - 248 pages |
Common terms and phrases
A/cm² achieved Appl approximation band diagram bandgap bias points bipolar transistors calculated Chapter collector conduction band constant contact resistance current density current-voltage curve depletion layer device capacitance device characteristics device design device speed device switching differential resistance region doping double barrier structure E.R. Brown electrons emitter energy epitaxial equation equivalent circuit Esaki diodes fabricated Fermi figures of merit function GaAs growth HBT's high speed IEEE impedance increased Lett load line measured micron microwave compatible molecular beam epitaxy monolayers negative differential resistance negative resistance ohmic contact optical oscillations output Phys pulse forming circuits pulse forming structures reduced resonant tunneling devices resonant tunneling diodes resonant tunneling transistor risetime room temperature RTD's RTT's S-parameter scattering parameters series resistance shown in Fig significantly spacer layer substrate T.C.L.G. Sollner thickness three-terminal transconductance transmission coefficient transmission line typical V₁ valley current voltage W.D. Goodhue wafer waveform width