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absorption alloys aluminum amorphous Appendix assume band diagram band structure band-gap Brillouin zone calculated called cell Chapter charge circuit conduction band considered constant copper crystal crystalline cubic curve damping decreases density depletion layer device diamagnetic diode direction discussed donor doping effective mass electric field electron bands electron wave energy bands energy levels Fermi energy ferromagnetic field strength Figure free electrons frequency GaAs gap energy gate voltage holes impurity increasing index of refraction insulators interactions interband transitions intrinsic semiconductor ions larger laser light magnetic field materials metal MOSFET n-type semiconductor negative number of electrons obtained optical properties orbit oscillators p-n junction paramagnetism phonons polarized polymers potential barrier reciprocal lattice reflectivity region resistivity result room temperature Schematic representation Schrodinger equation Section shown in Fig silicon solid solution spin superconducting theory thermal tion unit valence band valence electrons values vectors velocity versus vibration waveguide wavelength Wigner-Seitz cell yields zero