Accurate Model for the Short Channel Insulated Gate Field Effect Transistor
Department of Electrical Engineering, Stanford University., 1971 - Field-effect transistors - 85 pages
An accurate short channel Insulated gate field-effect transistor (IGFET) model is described which includes the effect of the drain depletion region on device characteristics in both triode and saturation regions. Calculation of deviations from the classical triode and saturation equations caused by interaction between the drain depletion region and the surface inversion region in devices constructed on lightly doped (
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active channel length bulk charge contribution bulk charge magnification calculated channel length modulation channel potential channel region Chapter charge magnification factor classical model classical theory constant contribution to threshold defined device characteristics device data dimensional drain bias drain current drain depletion region drain junction drain region drain voltage effect of channel effective threshold electric field expression Fermi level FIELD EFFECT TRANSISTOR forward transfer coefficient Gate Field Effect gate voltage geometrical channel length geometry GS FB integrated circuit inversion layer inversion region inverter pair long channel device microns modified MOS capacitor noise margin one-dimensional output conductance oxide p-channel saturation region Second Order Theory semiconductor short channel device short channel IGFET short channel model source and drain space charge region step junction substrate bias surface depletion region surface depletion width surface potential threshold voltage total band transfer characteristic triode and saturation triode region volts wafer