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Charge Storage Mechanism in Nanocrystalline Si Based
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absorption amorphous annealing anodization Appl applied atoms band bias bulk calculated carrier centers characteristics charge chemical concentration conductivity corresponding crystal crystalline current density curve decreases density dependence deposition device diameter direction DISCUSSION distribution dots effect electrical electron emission energy etching excitation experimental fabrication Figure film formation formed function gate grain growth higher holes increase indicates intensity interface island laser layer Lett light lower Materials measurements mechanism method nanocrystals nc-Si observed obtained optical oxide parameters particles pattern peak Phys pore porous silicon position possible prepared present pressure produced properties quantum Raman Raman spectroscopy range region reported Research respectively sample shift shown in Fig shows silicon single SiO2 Solid spectra spectrum structure studied substrate surface temperature thermal thickness thin tunneling voltage wavelength