Microcrystaline and Nanocrystalline Semiconductors - 2000:, Volume 638
J. M. Buriak, L. T. Canham, P. M. Fauchet, B. E. White, Jr, N. Koshida
Materials Research Society, Oct 26, 2001 - Technology & Engineering - 669 pages
Nanocrystalline and microcrystalline semiconductors are playing an increasing role in many areas of technology, such as deep submicron and nanoelectronic devices, optoelectronics, photovoltaics, and chemical and biological sensing applications. The interest in structures on this length scale stems from their large surface area; the fact that their properties can be tailored by specifying their size, shape and surface chemistry; and the nearly complete freedom of design and manufacture that has recently been achieved. This book presents the latest results of interdisciplinary research, integrating progress in respective disciplines with advances in allied fields. Emphasis is on silicon and other column-IV elements and alloys, which continue to dominate the market place. Breakthroughs in the theoretical understanding of electrical, optical, and chemical properties, advances in the manufacturing of quantum dots, nanostructures and films with the desired reproducibility are highlighted. Topics include: silicon quantum dot devices; porous silicon; silicon quantum dot preparation; nanocrystalline silicon; biology with nanoscale silicon; Si passivation and functionalization; silicon nanowires; Ge and SiGe quantum dots; diamond nanocrystals; rare earths in nanostructures and light-emitting devices.
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Silicon Single Electron Transistors With Single and Multi
Charge Storage Mechanism in Nanocrystalline Si Based
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2001 Materials Research a-Si QDs absorption amorphous annealing anodization Appl applied atoms band band gap bias voltage bulk c-Si calculated capacitance carrier characteristics charge chemical chemical vapor deposition concentration crystalline crystallites crystallization current density curve decreases dependence deposited device diameter dielectric dielectric function diode doping effect electric field electrochemical electron electropolishing emission energy etching ethanol experimental fabrication Figure function gate hole increase interface Koshida laser Lett luminescence Materials Research Society measurements microscope morphology n-type nanoclusters nanocrystalline nanocrystalline silicon nanocrystals nanoparticles nc-Si dots observed obtained optical parameters particles photoluminescence photonic Phys PL intensity PL peak PL spectra pore porosity porous silicon potential Proc quantum dots Raman scattering recombination refractive index region room temperature sample semiconductor sensor shift shown in Fig shows Si-H silicon dioxide spectroscopy spectrum sputtering structure substrate superlattice surface roughness Symp thermal tunneling wafer wavelength