Design, Growth and Fabrication of Resonant Tunneling DevicesCornell University, 1991 - 306 pages |
Common terms and phrases
alloy anode Appl atomic band barrier height barrier thickness bias voltage calculation cathode chapter circuit models conventional MBE growth cutoff frequency D(Ex device design device performance diode double barrier structure effective mass electron mobility energy equation etching finger structure GaAs GaAs)m grown growth interruption growth mode I-V characteristics IEEE InAlAs InAs InAs)m InAs)m(AlAs)m SPS InGaAs InP Substrate interface interfacial quality ion milling Kronig-Penney Model L.F. Eastman laser layer structure layer thickness Lett molecular beam epitaxy monolayer ohmic contact optical parasitic peak current density peak-to-valley current ratio phonon photoluminescence Phys PL peak position planar quantum quasibound Raman resonant tunneling device resonant tunneling diode RHEED RHEED oscillation RHEED pattern room temperature RTDs samples self-aligned series resistance short period superlattices shown in figure SPSS streak camera structure parameters superlattice surface technique thermal emission current transmission probability tunneling current tunneling probability un+1 valley current Vappl wafers width