Intense Quasiparticle Tunnel Injection Along a One Dimensional Superconductor: Nonequilibrium Phenomena and Device Applications |
Contents
INTRODUCTION 1 | 10 |
THEORETICAL AND EXPERIMENTAL REVIEW 6 | 10 |
DEVICE FABRICATION | 44 |
17 other sections not shown
Common terms and phrases
Andreev reflection approximately base electrode bottom junction characteristics charge imbalance relaxation chip chlorobenzene coherence length common electrode counter electrode neck critical current cryostat decrease deposited detector junction dimensional double edge devices double edge junction driven normal edge film edge geometry effective temperature electron beam electron beam evaporation electron beam lithography energy gap gradient equation evaporation excess quasiparticle density fabrication fanout gap edge gap sum gap suppression device hysteresis increased injected quasiparticles injection current injection efficiency injection power injection voltage injector junction ion mill junction of device layer liftoff mask aligner Nb edge nonequilibrium normal state transitions oxidation particle PbBi counter electrodes phonon escape phonon trapping photoresist Phys plot quasiparticle diffusion length quasiparticle injection recombination resist system resistance jump sandwich geometry shown in Figure structure substrate superconducting supercurrent tect or junction tector thermal top junction transition occurs transition region tunnel barriers tunnel junctions voltage bias Voltage mV