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alloy aluminum anode apparatus applied assigned barium titanate base binder bolometers boron carbon ceramic chamber characteristics Chemical Process Review chloride chromium coating coefficient of resistance compound comprises conductive containing crucible crystal deposited desired device dielectric dispersion doping electrical resistance electrodes evaporation example Figure film resistor finely divided firing frit furnace germanium glass graphite heated high temperatures increase indium inert insulating layer manufacture metal film metal oxide microns mixed mixture molybdenum negative resistance nickel nitride noble metal obtained ohms ohms per square operation oxygen palladium particles photoresistor platinum polymerized powder preferred pressure process developed production refractory resin resistance elements resistance film resistance material resistance values resistor resulting rhodium ruthenium semiconductor silicide silicon carbide silver Sittig solution specific resistance sprayed sputtering stability substantially substrate suitable surface tantalum temperature coefficient thermistor thickness thin film tin oxide titanium titanium dioxide U.S. Patent vacuum varistor voltage wafer weight percent