Silicon Materials: FSRC, August 13-15, 2001, La Jolla, California

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Stefan University Press, 2002 - Technology & Engineering
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Page 73 - This work was partly supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science and Culture and by TOTO Co.
Page 38 - Core Research for Evolutional Science and Technology (CREST) of the Japan Science and Technology Corporation (JST).
Page 29 - Center for Cooperative Research in Advanced Science and Technology, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 Initial nitridation process on clean Si(100)-2xl surfaces has been investigated by scanning tunneling microscopy and scanning tunneling spectroscopy.
Page 53 - School of Electrical Engineering and Computer Science University of Central Florida Orlando, FL...
Page 23 - Center for Solid State Electronics Research and Department of Electrical Engineering, Arizona State University, Tempe, AZ...
Page 57 - L. Varani, L. Reggiani, T. Kuhn, T. Gonzalez and D. Pardo, "Microscopic simulation of electronic noise in semiconductor materials and devices", IEEE Trans. Electron Devices 41, pp.
Page 38 - A. Kohno. H. Murakami. M. Ikeda. H. Nishiyama. S. Miyazaki and M. Hirose: Ext. Abstr. 1998 Int. Conf. Solid State Devices & Materials. Hiroshima.
Page 38 - REFERENCES 1. S. Tiwari, F. Rana, H. Hanafi, H. Hartstein, EF Crabbe and K.
Page 34 - SM Sze, Physics of Semiconductor Devices, 2nd ed., Chap. 5, John Wiley & Sons, New York (1981).
Page 65 - Engineering Research Institute, School of Engineering , University of Tokyo 2-11-16, Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan...

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