Conference Proceedings, Volume 24Microwave Exhibitions and Publishers, 1994 - Microwave devices |
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Page 1042
... substrates under two conditions : metal - substrate and metal- insulator - substrate . The insulators are sandwiches of : SiO2 ( field ) / Si3N4 and SiO2 ( field ) / Si3N4 with SiO2 ( gate ) . The measured unloaded Q of single layer ...
... substrates under two conditions : metal - substrate and metal- insulator - substrate . The insulators are sandwiches of : SiO2 ( field ) / Si3N4 and SiO2 ( field ) / Si3N4 with SiO2 ( gate ) . The measured unloaded Q of single layer ...
Page 1512
... substrate . MgO substrate . The amplifier is a hybrid structure incorporating two Fujitsu HEMTs , and exhibits gain of 23db and 26db and minimum noise figure of 0.9db and 0.25db at room temperature and at 77 degrees Kelvin ...
... substrate . MgO substrate . The amplifier is a hybrid structure incorporating two Fujitsu HEMTs , and exhibits gain of 23db and 26db and minimum noise figure of 0.9db and 0.25db at room temperature and at 77 degrees Kelvin ...
Page 1758
... substrate layers with a different corresponding radius , resulting in different element spacings in the different layers . This means that additional care has to be taken for the exact positioning of the different substrate layers ...
... substrate layers with a different corresponding radius , resulting in different element spacings in the different layers . This means that additional care has to be taken for the exact positioning of the different substrate layers ...
Contents
Session B2 Special Topics in Microwaves | 981 |
Millimeter wave surface resistance measurements of high Tc superconductive | 986 |
High temperature dielectric measurement using the TE11 mode | 992 |
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algorithm amplitude analysis applications array band bandwidth bias calculated capacitance characteristic impedance chip components computed configuration coplanar coplanar waveguide coupling device dielectric resonators diode effects electric electromagnetic Electronics elements equation equivalent circuit FDTD field Figure filter Frequency GHz frequency range function GaAs gain gate HEMT IEEE IEEE MTT-S IEEE Trans input power insertion loss integrated layout linear matching matrix measured MESFET method microstrip antenna microstrip line Microwave Microwave Theory Tech mixer MMIC mode modulation noise noise figure nonlinear obtained on-wafer operation optical optimisation optimization oscillator output power parameters patch antenna performance permittivity PIN diode planar plane port probe propagation pulse rectangular reflection coefficient resonant frequency return loss S-parameters scattering parameters shown in Fig shows signal simulation slot structure stub substrate superconducting surface technique temperature thickness transistor transmission line values voltage wave