Defect Engineering in Semiconductor Growth, Processing, and Device Technology: Symposium Held April 26-May 1, 1992, San Francisco, California, U.S.A.
S. Ashok, J. Chevallier, E. Weber, K. Sumino
Materials Research Society, 1992 - Technology & Engineering - 1144 pages
Proceedings of the San Francisco meeting of April-May 1992. Papers emphasize deliberate and controlled introduction and manipulation of defects in order to engineer some desired properties in semiconductor materials and devices. Topics include: defects in bulk crystals, and in thin films; defect characterization; hydrogen interaction; processing induction of defects; quantum wells; ion implantation. Annotation copyright by Book News, Inc., Portland, OR
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DYNAMIC BEHAVIOR OF INTRINSIC POINT DEFECTS IN FZ AND
AN INVESTIGATION OF VACANCY CONCENTRATIONS IN BULK SILICON
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acceptor activation annealing annihilation Appl atoms band beam bond bulk carrier characteristics charge complexes concentration contamination corresponding crystal decrease deep defects density dependence deposition depth determined device diffusion discussed dislocations distribution donor doped effect electrical electron energy enhanced etching experimental experiments Figure formation formed function GaAs gettering grown growth higher hydrogen implantation impurities increase indicates initial intensity interface interstitial INTRODUCTION irradiation layer Lett lifetime lower material measurements mechanism metal method n-type observed obtained occurs oxide oxygen parameter peak Phys position positron precipitates present Proc profiles properties range recombination reduced region reported Research resistivity respectively samples Semiconductors shown shows silicon specimen spectra spectrum stress structure substrate surface technique temperature thermal thickness trap treatment vacancy wafers