Ballistic Electrons in a Submicron Semiconducting Structure: A Boltzmann Equation Approach |
Contents
DriftDiffusion Equation | 6 |
Conservation Equations or the Drifted | 9 |
Conclusions About the NNN Structure | 15 |
Copyright | |
35 other sections not shown
Common terms and phrases
amps/cm² applied voltage approximation average velocity ballistic electron peak ballistic peak ballistic transport Boltzmann equation calculation chapter chemical potentials cm V-sec cm²/V-sec collision compared conduction band cooling D. K. Ferry dashed line decreases discussed distribution function dotted line drift-diffusion equation echo electrons echo peaks effective mass elec electric field electron density Electron Devices equation 2.5 equilibrium distribution estimate experimental fr,joint l.eq fr,l.eq GaAs gallium arsenide H. L. Grubin Hesto high fields homogeneous field I-V characteristic IEEE Trans increase inhomogeneous integrating joint kV/cm L valley L,joint mean free path Monte Carlo method parameters particle conservation peak velocity phonon Phys Poisson equation potential barrier potential energy potential maximum relaxation scattering rate Semiconductors shown in Figure single-valley result solid line spatial submicron structures T-valley density thermal thermionic emission transfer trons two-valley model v-E curve valley Velocity 107 cm/sec velocity distribution x₁