## Ballistic electrons in a submicron semiconducting structure: a Boltzmann equation approach |

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### Contents

DriftDiffusion Equation | 7 |

Monte Carlo Simulation | 11 |

Conclusions About the N NN Structure | 15 |

Copyright | |

18 other sections not shown

### Common terms and phrases

applied voltage approximation average velocity ballistic electron peak ballistic peak ballistic transport ballistic velocity Boltzmann equation calculation caused chapter chemical potentials cm V-sec cm/sec collision compared conduction band convergence dashed line discussed distribution function doping steps dotted line drift-diffusion equation echo effects echo electrons echo peaks effective mass elec electric field electron density equation equation estimate experimental GaAs homogeneous field I-V characteristic I-V curve increase inhomogeneous injecting integrating intervalley iterations kV/cm L-valley density L-valley electrons l.eq Maxwellian mean free path mobility Monte Carlo method N region N+ region N+-N N+ structure np(x parameters phonon Phys Poisson equation potential barrier potential energy potential maximum relaxation-time scattering rate Semiconductors shown in Figure single-valley model single-valley result solid line solution solve submicron structures T-valley thermal thermionic emission tion transfer transport trons two-valley model v-E curve valley velocity distribution