Power MOSFETs: Theory and ApplicationsDetails the theory of power MOSFETs and their applications. Explains the basis of MOSFET characteristics, and the features that determine MOSFET behavior. Examines the interaction of the MOSFET device with other elements in the circuit, and how device characteristics influence circuit design. Describes several circuits at length to highlight the practical details of power MOSFET use. |
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Contents
Preface | 1 |
THRESHOLD VOLTAGE | 25 |
STATIC CHARACTERISTICS | 53 |
Copyright | |
37 other sections not shown
Common terms and phrases
achieved allowable applications base becomes bipolar transistor body-drain diode breakdown capacitance cause channel characteristics charge circuit clamped components conduction Conf connected constant converter cycle depletion determined device diode dissipation doping drain current drop effect electric Electron energy Equation failure fall field flow forward frequency gate drive gate oxide gate voltage given gives higher IEEE important increase inductance integrated inverter junction layer lead limit linear load losses lower maximum method motor n-channel normal Note obtained occur operating output package parallel parasitic period positive possible potential power MOSFET pulse RDS(on Rectifier reduced region represented resistance resistor resonant result reverse rise semiconductor sense shown in Figure shows signal silicon speed supply surface switching temperature thermal threshold voltage transformer turn turn-off turn-on typical usually variation voltage drop waveform
Bibliographic information
| Title | Power MOSFETs: Theory and Applications |
| Authors | Duncan A. Grant, John Gowar |
| Edition | illustrated |
| Publisher | Wiley, 1989 |
| Original from | the University of Michigan |
| Digitized | Dec 11, 2007 |
| ISBN | 047182867X, 9780471828679 |
| Length | 528 pages |
| Subjects | › › Technology & Engineering / Electrical Technology & Engineering / Electronics / Transistors |
| Export Citation | BiBTeX EndNote RefMan |