## Physics of Hot Electron Transport in SemiconductorsThis review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system. |

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### Contents

Preface v | 803 |

Force and EnergyBalance Equations to Lowest Order in HI 10 | 814 |

Transient Transport 37 | 841 |

Several Species of Carriers 57 | 861 |

Nonequilibrium Phonon Phenomena 72 | 876 |

Balance Equations for HotElectron Transport in the Presence | 884 |

Balance Equations for Weakly Nonuniform Systems 91 | 895 |

Isothermal Transport and BalanceEquation Approach 104 | 908 |

Summary 199 | 1003 |

Transport Equations under a Strong High Frequency Electric Field 210 | 1014 |

Linear High Frequency Conductivity 219 | 1023 |

Nonlinear HF Conductivity 221 | 1025 |

Appendix 228 | 1032 |

Introducton 233 | 1039 |

Application to Multivalley Semiconductors 245 | 1049 |

References 252 | 1056 |

Balance Equations for General Systems with Intracollisional Field Effect 113 | 917 |

Recent Developments of the BalanceEquation Theory 120 | 924 |

References 127 | 931 |

Recent Developments in Magnetotransport Theory 133 | 937 |

Linear and Nonlinear 137 | 942 |

Magnetotransport in Microstructures 151 | 955 |

Concluding Remarks and Summary 163 | 967 |

Effect of Nonequilibrium Phonons on the Electron Relaxation and Transport 171 | 975 |

Further Applications of the Theory 182 | 986 |

Other Theoretical Works 192 | 996 |

Steady State Transport 261 | 1065 |

Appendix A 270 | 1074 |

Quantum Mechanical Treatment of Center of Mass Variables 277 | 1081 |

Vanishing Current and Correct Finite Result of Adiabatic Resistivity 283 | 1089 |

References 293 | 1097 |

Nonequilibrium Greens Function Approach to Dynamic Properties | 1099 |

Frequency Response 303 | 1107 |

Concluding Remarks 312 | 1116 |

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### Common terms and phrases

applied approach approximation assume average balance equation becomes bias calculated carrier center of mass components conductivity considered constant contribution coordinates correlation function Coulomb Coulomb interaction coupling curve defined density density matrix dependent derived described determined discussed distribution function drift velocity dynamic effect electric field electron system electron temperature energy equilibrium expression factor fluctuation force frequency frictional force given Green's functions Hamiltonian holes Horing hot-electron impurity included initial integral Lett limit linear lowest magnetic field method mobility momentum motion noise nonequilibrium nonlinear obtained operator parameters path perturbation phonon Phys Physics potential present quantum relations relative electron relaxation resistivity resonance respectively response scattering Semiconductors shown shows solid statistical steady strong superlattice theory thermal Ting transient transport treated values variables written yields