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CHAPTER TITLE PAGE
NN HETEROJUNCTION GROWTH
GaAsAlGaAs INTERFACE GROWTH
2DEG AlGaAs buffer annealed beam pressures behavior buffer layer Calawa cladding layers conduction band Cornell density desorbing devices discussed donor dopant effect electrical electron mobility energy exciton exhibit experimental field effect transistors Figure flux transient function FWHM GaAs and AlGaAs GaAs growth gallium Gallium Arsenide growth conditions growth of high growth rate Hall measurements heavy hole exciton HEMT heterostructure high quality AlGaAs interface L.F. Eastman lattice LEC substrates lineshape low flux ratios luminescence material quality MBE growth metal rich edge metal stable modulation doped structure Molecular Beam Epitaxy n-type n+ substrates ohmic contact P.A. Maki peak Photoluminescence Photoluminescence spectra Phys PL spectra present pump powers quantum well structures redistribution S.C. Palmateer sample sheet charge shown in Fig silicon SIMS scans single quantum solidus field spacer spectra of SQW substrate temperature surface reconstruction surface segregation surface stoichiometry thermionic emission transconductance transistors undoped V:III flux ratio