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active channel active layer AlGaAs aligned analysis attenuation constant back side back surface ballistic calculated capacitance carrier characteristic impedance Contour plots density depletion region Deposited energy distribution device performance device width distributed interaction drain line drain terminal drain voltage dual surface lithography effect electric field electron beam electron beam lithography electroplating electrostatic potential equivalent circuit etch exposure fabrication field effect transistor Figure frequency GHz GaAs Gain dB gate and drain gate and source gate length gate level gate line gate OGST gate step gate to source incident energy interface Lg/Ls load mask line MESFET Micrograph microstrip microstrip lines misalignment numerical device simulations OGST operation parameters plating base PMMA point entrance polyimide protons quasi-static transport data right drain self-aligned dual surface source contact source current step response structure substrate symmetry terminal currents thickness top surface trajectories transconductance transport models tri-level resist values velocity X-ray lithography