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Part I INTRODUCTION
The Theory of Defects in Irradiated Semiconductors Invited A M STONEHAM
An LCAOMO Treatment of the Vacancy in Diamond R P MESSMER and G D WATKINS
32 other sections not shown
absorption activation energy annealing Answer appears Appl associated atoms band calculated carbon carrier cent changes charge complex concentration conclusion conductivity conference correlation corresponding crystals curve damage decrease defects dependence diffusion direction DISCUSSION disorder displaced divacancy donor doped dose effect electrical electron electron irradiation energy expected experimental experiments Figure fluence formation formed function GaAs germanium give given higher implantation impurity increase indicate intensity interaction interstitial introduction irradiation lattice light lithium low temperature lower luminescence material measurements MeV electrons mobility n-type neutron observed obtained occurs optical oxygen pairs Phys possible present probability produced Question radiation range recombination recovery REFERENCES region removal resistivity room temperature samples scattering Semiconductors shown in Figure shows silicon similar spectra spectrum stage stress structure studies suggested Table thermal trap vacancy Vook