The Electrical Characterization of Semiconductors: Majority Carriers and Electron States, Volume 2
Describes the physical principles behind experimental techniques used for measuring the electrical properties of semiconductors. The principles involved are illustrated by reference to selected examples drawn from the world of semiconductor materials.
Interpretation of CapacitanceVoltage Profiles
6 other sections not shown
amplitude analysis applied appropriate approximation band bias calculated capacitance capture carrier density Chapter characterization charge compared concentration conduction consider constant correction cross deep defined dependence depletion depth depletion region derived described detail determined diode distance distribution DLTS donor doping edge effect electric electron emission rate energy Equation example experiment factor field Figure follows free carrier frequency function GaAs given gives Hall hole illumination illustrated important impurity increases indicated injection layer majority material measured method minority carrier traps mobility n-type necessary observed obtained occupancy occurs optical peak plot positive possible probe produced pulse range relation represents resistance response reverse bias sample scattering Section semiconductor shown shows signal similar space steady structures substrate surface techniques temperature thermal emission thickness transient transition trap uniform usually voltage