GE Transistor Manual

Front Cover
General Electric Company, 1962 - Diodes - 440 pages

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Contents

Space Charge Neutrality
8
TRANSISTOR CONSTRUCTION TECHNIQUES
18
THE TRANSISTOR SPECIFICATION SHEET
30
Copyright

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G E Transistor Manual
General Electric Company. Semiconductor Products Department
Snippet view - 1962

Common terms and phrases

alloy ambient amplifier anode applied AUDIO base current bias breakdown voltage capacitance capacitor CATHODE characteristics collector current common collector common emitter configuration current gain cycle decrease detector diffused diode dissipation ELECTRICAL PARAMETERS electrons emitter current equation factor failure mechanisms failure rate feedback fhfb mc flip-flop forward current frequency gate germanium ICBO increase input impedance interbase JEDEC junction temperature leakage current load MAXIMUM RATINGS MESA TRANSISTOR METER negative resistance noise NPN Sw NPN transistor NPN-PL operation Outline Drawing output PERCENTILE PNP 25W PNP Sw PNP-A power gain production pulse R₁ R₂ region reliability resistance resistor reverse biased reverse voltage saturation semiconductor device shown in Figure signal silicon specified square wave stability stress TEKTRONIX thermal trigger Tunnel Diode types unijunction transistor V₁ VCE SAT volts VTVM μα

Bibliographic information

TitleGE Transistor Manual
AuthorGeneral Electric Company. Semiconductor Products Department
Edition6
PublisherGeneral Electric Company, 1962
Original fromthe University of Michigan
DigitizedSep 20, 2010
Length440 pages
  
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