Technical Physics Letters, Volume 19, Issues 7-12American Institute of Physics, 1993 - Physics |
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CONTENTS continued | 411 |
Technical Physics Letters Vol 19 No 7 July 1993 | 429 |
Technical Physics Letters Vol 19 No 7 July 1993 | 443 |
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absorption Academy of Sciences acoustic amplitude atoms beam calculated cavity centers characteristics clusters coefficient color centers crystals curve density dependence dielectric diffraction discharge effect electric field electroluminescence electron emission energy epitaxial equation Europe & Asia excitation experimental ferroelectric films flux frequency fullerenes function GaAs heat heterostructures high-temperature superconducting increase Institute of Physics intensity interaction ionization ions irradiation Ivanov laser layer Lett liquid magnetic field measured method microwave molecular beam epitaxy Moscow nonlinear obtained optical oscillations oxide p-n junction parameters phase transition photoluminescence Phys Pis'ma Zh plasma polarization porous silicon properties PUAS airfreight pulse radiation region resonance Russian Academy sample semiconductor signal solid solution spectra Steve Torstveit structures substrate superconducting surface surface acoustic wave Tech Technical Physics Letters Tekh temperature thermal thickness tion Translated by Steve velocity voltage wave waveguide