Proceedings of the Second International Symposium on Low and High Dielectric Constant Materials: Materials Science, Processing, and Reliability Issues |
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airgap annealing BEOL BiCMOS BST films BST thin films C2F6 flow rate capacitance capacitor Ceramics chemical Cl-bearing species copolymers copper corrosion corrosion defects CoWP cure temperature cured at 350 decreased degradation deposition rate devices dielectric constant dielectric constant materials dissipation factor effect electrical Electrochem film thickness fluorine fluoropolymers function gapfill gate helicon HSQ cured increase insulator integration interconnect interface labile block layer leakage current density low dielectric constant low-k measured metal etch microporous monomer nanofoams nitride oxide oxygen process Parylene peak PECVD photoresist Phys planarization plasma Poly-Si polyimide polymer polymerization Polysilazane pressure Proc pyrolysis ratio RC delay reaction reduced refractive index reliability resistance RF power sample sccm Semiconductor shown in Figure shows silane silane fraction silicate SOG silicon dioxide SiOF films source overlap spectra sputtered stress substrate surface Ta2Os Teflon Teflon AF 1600 test structures transistors voltage wafer wiring xerogel
Popular passages
Page 32 - IBM Research Division, Almaden Research Center 650 Harry Road, San Jose, CA...
Page 210 - This work was supported by the National Science Council of Republic of China under the contract number NSC84-2215-E-009-002 and Macronix International Co.
Page 34 - The foams are prepared from block copolymers consisting of thermally stable and thermally labile blocks, the latter being the dispersed phase. Foam formation is effected by thermolysis of the thermally labile block leaving pores of...
Page 205 - Rapid isothermal processing based on incoherent radiation as the source of optical and thermal energy is emerging as a key low thermal budget processing technique.
Page 237 - Corrosion defects observed during this characterization had a random and systematic distribution. Random defects were suspected to be due to local areas of higher copper concentration within the metal alloy or higher Cl-bearing...
Page 211 - Y. Okada, PJ Tobin, KG Reid, RI Hegde, B. Maiti and SA Ajuria, IEEE Trans.
Page 64 - MK Shi, A Selmani, L Martinu, E Sacher, MR Wertheimer and A Yelon, J. Adhesion Sci. Technol, 8(10) (1994) 1129.
Page 20 - Department of physics, Korea Advanced Institute of Science and Technology, Taejon 305-701, Korea...
Page 210 - ... stress relief through slightly more nitrogen incorporation. Both N2O and NO oxynitrides have shown excellent interface endurance under electrical stress compared to control oxide (Fig. 3). NO-based oxynitrides have the lowest interface state generation due to the high level of nitrogen at the SiO2-Si interface which reduces interfacial strain through the replacement of strained Si-O bonds by Si-N bonds and it also replaces weak Si-H bonds by strong Si-N bonds making bond-breaking under electrical...
Page 189 - CoWP film. Conformal electroless CoWP deposition in such narrow trenches was observed. Similar results were observed for trenches greater than 350 nm wide with aspect ratio <4:1.
Bibliographic information
| Title | Proceedings of the Second International Symposium on Low and High Dielectric Constant Materials: Materials Science, Processing, and Reliability Issues Electrochemical Society: Proceedings Volume 97, Issue 8 of Proceedings (Electrochemical Society) Volume 97, Issue 8 of Proceedings Series |
| Editor | Hazara S. Rathore |
| Contributor | Electrochemical Society. Dielectric Science and Technology Division |
| Publisher | The Electrochemical Society, 1997 |
| ISBN | 1566771358, 9781566771351 |
| Length | 262 pages |
| Subjects | › Science / General |
| Export Citation | BiBTeX EndNote RefMan |