Proceedings of the Second International Symposium on Low and High Dielectric Constant Materials: Materials Science, Processing, and Reliability Issues
Hazara S. Rathore
The Electrochemical Society, 1997 - Science - 262 pages
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activation annealing applications barrier block bond capacitance capacitor Ceramics chemical compared concentration copper corrosion CoWP cured decreased defects degradation delay density deposition determined devices dielectric constant effect electrical electroless electron energy etch factor Figure flow fluorine fluoropolymers formed function gate heated higher HSQ cured hydrogen increase indicates initial insulator integration interconnect layer leakage current levels lines lithography lower materials measured metal method monomer obtained oxide oxygen peak performance Phys plasma polyimide polymer presented pressure produced properties range ratio reaction reduced refractive index reliability resistance RF power sample Semiconductor shown in Figure shows significant silane silicon SiO2 SiOF films source overlap species sputtered stability step stress structures substrate surface Table Teflon temperature thermal thickness thin films typical values vapor various voltage wafer wiring
Page 32 - IBM Research Division, Almaden Research Center 650 Harry Road, San Jose, CA...
Page 34 - The foams are prepared from block copolymers consisting of thermally stable and thermally labile blocks, the latter being the dispersed phase. Foam formation is effected by thermolysis of the thermally labile block leaving pores of...
Page 205 - Rapid isothermal processing based on incoherent radiation as the source of optical and thermal energy is emerging as a key low thermal budget processing technique.
Page 237 - Corrosion defects observed during this characterization had a random and systematic distribution. Random defects were suspected to be due to local areas of higher copper concentration within the metal alloy or higher Cl-bearing...
Page 211 - Y. Okada, PJ Tobin, KG Reid, RI Hegde, B. Maiti and SA Ajuria, IEEE Trans.
Page 64 - MK Shi, A Selmani, L Martinu, E Sacher, MR Wertheimer and A Yelon, J. Adhesion Sci. Technol, 8(10) (1994) 1129.
Page 20 - Department of physics, Korea Advanced Institute of Science and Technology, Taejon 305-701, Korea...
Page 210 - ... stress relief through slightly more nitrogen incorporation. Both N2O and NO oxynitrides have shown excellent interface endurance under electrical stress compared to control oxide (Fig. 3). NO-based oxynitrides have the lowest interface state generation due to the high level of nitrogen at the SiO2-Si interface which reduces interfacial strain through the replacement of strained Si-O bonds by Si-N bonds and it also replaces weak Si-H bonds by strong Si-N bonds making bond-breaking under electrical...