Chemical Aspects of Electronic Ceramics Processing: Volume 495Prashant N. Kumta This volume contains 65 papers from a symposium entitled "Chemical Aspects of Electronic Ceramics Processing," held over four days at the 1997 MRS ?all Meeting in Boston. This symposium is the "merger" of two previously held symposia, "Non- Oxide Ceramics" and "Metal Organic Chemical Vapor Deposition of Electronic Ceramics," both held twice before in the Fall of 1993 and the l"all of 1995. The considerable overlap, between the two symposia, especially in the area of chemical vapor deposition of non-oxide electronic ceramics, suggested that combining the two would attract a wider audience without unduly sacrificing the focus of the symposium. The common themes in all of the research presented in this volume are the creative use of chemistry principles for ceramic fabrication and a multidisciplinary approach to materials research. Inorganic chemistry, solid-state chemistry, chemical engineering, materials science and engineering, and electrical engineering have all been skillfully combined to produce materials which will play an increasingly more important part in our lives. As in prior years, chemical vapor deposition (CVD) continues to be a popular area of research and was the subject of approximately half of the papers in this volume. Farticularly "hot" areas of research are new and improved precursors, delivery systems for low-vapor pressure precursors, and improved processing and materials properties. ?apers are evenly divided between oxide ceramics and non- oxide ceramics. |
Contents
MetalorganicChemicalVaporDeposition Routes | 3 |
Control of Growth Dynamics by Molecular Design in | 11 |
Epitaxial Ferroelectric Oxides for ElectroOptic | 23 |
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1998 Materials Research alkoxide ammonia amorphous annealing Appl atoms BaTiO3 carbon carrier gas ceramics Chem chemical vapor deposition chemistry coating composition compounds concentration crystalline decomposition decrease density deposition rate diamond films dielectric constant doped Electrochem electron emission energy epitaxial etching excimer excimer laser ferroelectric films deposited films grown flow rate formation grain graphite growth rate heated hydrogen increase laser lattice layer Lett ligands liquid Materials Research Society measured metal MOCVD nanoporous nitrogen observed obtained optical oxygen peak perovskite phase Phys plasma powder prepared pressure Proc properties pyrochlore pyrolysis ratio reaction reactor resistance room temperature ruthenium samples scanning sccm semiconductor shows silicon SiO2 sol-gel solid solution solvent spectra spin coating SrTiO3 stoichiometry strontium structure substrate substrate temperature surface Symp synthesis TDMAT techniques thermal thickness thin films titanium Torr wafer X-ray diffraction YBCO