A Study on Electrostatic Optics for Focused Ion Beam Lithography and Modeling of Focused Ion Beam Exposure of PMMA |
Contents
IV | 15 |
FOCUSED ION BEAM LITHOGRAPHY SYSTEM AT CORNELL FIPS II | 18 |
ELECTROSTATIC LENS FOR FIPS II | 37 |
9 other sections not shown
Common terms and phrases
acceptance angle acceptance half angle achieve analytical angular current density aperture astigmatism axial aberrations axial potential beam acceptance angle beam acceptance half beam blanker beam energy beam lithography systems beam probe blanking plates blanking signal calculated center of deflection chromatic aberration coefficients deflection chromatism defocus distance dose effects electron beam lithography electrostatic lenses field curvature field ionization source FIPS II focused ion beam focused ion probe function Gaussian image plane H₂ field ionization H₂ ion high resolution image side ion beam lithography ion source Kirkland knife edge magnification maximum spurious deflection mrad Normalized Current Distribution Normalized Radius objective lens octupole deflector optical properties optimum time delay Paik PIBER pixel PMMA post-lens projector lens quadrupole deflector raster scanning resist scanning radius shown in Fig simple integration method specimen stage spherical aberration spherical and chromatic spurious deflection static deflection virtual source voltage Wien filter X-ray lithography