A study on electrostatic optics for focused ion beam lithography and modeling of focused ion beam exposure of PMMA |
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Contents
FOCUSED ION BEAM LITHOGRAPHY SYSTEM AT CORNELL FIPS II | 18 |
ELECTROSTATIC LENS FOR FIPS II | 37 |
1 Optical properties of FIPS II lenses | 72 |
12 other sections not shown
Common terms and phrases
acceptance half angle achieve analytical aperture astigmatism axial aberrations beam acceptance angle beam acceptance half beam blanker beam energy beam envelope beam lithography system beam probe blanking rate blanking signal calculated center of deflection charged particle optics chromatic aberration coefficients coma CONDEV deflection aberrations deflection chromatism dose effect electron beam electron beam lithography electrostatic lenses exposure characteristics field curvature field ionization source FIPS focused ion beam focused ion probe following equation function Gaussian image plane H+ ions high resolution image side initial current distribution ion beam lithography ion source Kirkland knife edge magnification maximum spurious deflection Monte Carlo method mrad normalized numerical results objective lens octupole deflector optical column optimum time delay particle PIBER plates PMMA projector lens quadrupole deflector resist rotating dipole scanning radius shown in Fig simple integration method spherical aberration spherical and chromatic static deflection third order virtual source Wien filter X-ray lithography
Bibliographic information
| Title | A study on electrostatic optics for focused ion beam lithography and modeling of focused ion beam exposure of PMMA |
| Author | Hongyul Paik |
| Publisher | Cornell University June, 1985 |
| Original from | Cornell University |
| Digitized | Jun 20, 2011 |
| Length | 548 pages |
| Subjects | › Electron optics Ion bombardment Science / Nuclear Physics Science / Optics |
| Export Citation | BiBTeX EndNote RefMan |