Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
Shuji Nakamura, Shigefusa F. Chichibu
CRC Press, Mar 9, 2000 - Science - 386 pages
The "blue laser" is an exciting new device used in physics. The potential is now being recognized for its development into a commercial lighting system using about a tenth of the power and with a thousand times the operating lifetime of a comparable conventional system. This comprehensive work introduces the subject at a level suitable for graduate students. It covers the basics physics of light emitting diodes (LEDs) and laser diodes (LDs) based on gallium nitride and related nitride semiconductors, and gives an outline of their structural, transport and optical properties, and the relevant device physics. It begins with the fundamentals, and covers both theory and experiment, as well as an examination of actual and potential device applications. Shuji Nakamura and Nichia Chemicals Industries made the initial breakthroughs in the field, and these have revealed that LEDs and LDs are a sophisticated physical phenomenon and a commercial reality.
What people are saying - Write a review
We haven't found any reviews in the usual places.
Basics Physics and Materials Technology of GaN LEDs and
Theoretical Analysis of Optical Gain Spectra
Electrical Conductivity Control
Crystal Defects and Device Performance in LEDs and LDs
Emission Mechanisms and Excitons in GaN and InGaN Bulk and QWs153
Life Testing and Degradation Mechanisms in InGaN LEDs
Development and Future Prospects of Ganbased LEDs and LD
Other editions - View all
absorption acceptor active Appl atomic band becomes blue bulk calculated carrier caused characteristics Chichibu composition concentration conduction confinement constant Coulomb Coulomb interaction crystal decreases defects degradation density dependence devices direction dislocations doping effect efficiency electric electron emission energy Equation et al excitation exciton experimental field function given grown growth higher hole impurity increasing indicates InGaN intensity interaction laser lattice layer LEDs Lett levels lifetime light localized lower mass material measured mechanism n-type Nakamura nitride observed obtained operation optical optical gain output power parameters peak Photon Phys plane potential properties quantum radiative recombination region reported respectively sample sapphire semiconductors shown in Figure shows spectra strain structure substrate surface temperature thickness transition units valence band Walle wavelength wurtzite