Advances in Infrared PhotodetectorsSemiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the "Willardson and Beer" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry.
|
Contents
Chapter 2 Quantum Well Infrared Photodetectors | 59 |
Chapter 3 Quantum Dot Infrared Photodetectors | 153 |
Chapter 4 Terahertz Semiconductor Quantum Well Photodetectors | 195 |
Chapter 5 Homo and Heterojunction Interfacial Workfunction Internal PhotoEmission Detectors from UV to IR | 243 |
Other editions - View all
Advances in Infrared Photodetectors Sarath D. Gunapala,David R. Rhiger,Chennupati Jagadish No preview available - 2011 |
Common terms and phrases
absorption AlGaAs Appl Ariyawansa band edge band gap band structure Bandara bias voltage calculated conduction band contact layers curves cutoff wavelength dark current density detection device diode doping dual-band effective Electron emitter energy Epitaxial etching excited experimental fabrication FIGURE focal plane arrays frequency GaAs GaSb grating growth Gunapala HEIWIP detectors heterostructure HgCdTe IEEE III–V imaging InAs InAs/GaSb superlattice increase infrared detectors interface intersubband Krishna laser Lett Levine LWIR material Matsik measured miniband Mumolo MWIR Nguyen noise operating temperature optical p-type parameters peak response Perera photoconductive photoconductive gain photocurrent photodetectors photon pixel Properties QDIPs quantum dots quantum efficiency QWIP QWIP FPA Rafol Razeghi region ROIC samples Semiconductors Semimetals shown in Fig shows Silicon spectral response spectrum SPIE substrate superlattice surface Technol thermal thickness THz QWP transitions tunneling type-II unipolar barrier valence band Wavelength µm width workfunction