Spin ElectronicsDavid D. Awschalom The history of scientific research and technological development is replete with examples of breakthroughs that have advanced the frontiers of knowledge, but seldom does it record events that constitute paradigm shifts in broad areas of intellectual pursuit. One notable exception, however, is that of spin electronics (also called spintronics, magnetoelectronics or magnetronics), wherein information is carried by electron spin in addition to, or in place of, electron charge. It is now well established in scientific and engineering communities that Moore's Law, having been an excellent predictor of integrated circuit density and computer performance since the 1970s, now faces great challenges as the scale of electronic devices has been reduced to the level where quantum effects become significant factors in device operation. Electron spin is one such effect that offers the opportunity to continue the gains predicted by Moore's Law, by taking advantage of the confluence of magnetics and semiconductor electronics in the newly emerging discipline of spin electronics. From a fundamental viewpoine, spin-polarization transport in a material occurs when there is an imbalance of spin populations at the Fermi energy. In ferromagnetic metals this imbalance results from a shift in the energy states available to spin-up and spin-down electrons. In practical applications, a ferromagnetic metal may be used as a source of spin-polarized electronics to be injected into a semiconductor, a superconductor or a normal metal, or to tunnel through an insulating barrier. |
Contents
Spin ElectronicsIs It the Technology of the Future? | 1 |
References | 7 |
Conclusions | 17 |
Characterization of Magnetic Nanostructures | 25 |
References | 32 |
Research Activities in Japan | 41 |
Optoelectronic Manipulation of Spin in Semiconductors | 49 |
Magnetoelectronic Devices | 61 |
Comparison of Japan and Europe Research with | 67 |
B Appendix B Site ReportsEurope | 78 |
Appendix C Site Reports Japan | 127 |
Appendix D Highlights of Recent U S Research | 173 |
E Appendix E Glossary | 193 |
Other editions - View all
Spin Electronics David D. Awschalom,Robert A. Buhrman,James M. Daughton,Stephan von Molnár,Michael L. Roukes Limited preview - 2013 |
Spin Electronics David D. Awschalom,Robert A. Buhrman,James M. Daughton,Stephan von Molnár,Michael L. Roukes Limited preview - 2004 |
Common terms and phrases
activities addition Advanced Appl applications approach atomic barrier Buhrman Center characterization coherence collaboration communications computing Date Daughton demonstrated density dependent detection devices direct effect effort electrical electron spin Engineering et al Europe experiments fabrication facilities ferromagnetic field funding GaAs graduate students growth heads important IMPRESSIONS industry Institute integrated interaction interest interface involves Japan junctions laboratories layer Lett lithography magnetic field magnetic semiconductors magnetoresistance major manipulation materials measurements memory metal microscopy Molnar MRAM nanoscale nanostructures Ohno optical panel Ph.D Phys Physics polarization possible postdocs potential present processes produce Professor properties quantum quantum dots recently resolution room temperature Roukes scale scanning Science single sources spin electronics spin injection spin-polarized spintronics structures switching techniques Technology temperature thin film Tohoku University transition transport tunneling United University WTEC