Thin Film Materials, Processes, and Reliability: Proceedings of the International Symposia |
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accelerator acid activation added addition adhesion annealing applied asperity atomic barrier bath chamber charge chemical citric acid Cl₂ compared composition concentration constant copper damage decrease deposition determined device dielectric diffusion distribution effect electrical Electrochem electroless electron energy etch rate etchant expected experiment experimental Figure films flow fluid force formed function higher improved increase indicates integration interconnects interface island layer low-k material measured mechanical metal method MTMS nitridation non-uniformity observed obtained oxide palladium particles patterning peak performance plasma plating polishing potential present pressure properties ratio reaction reduced removal rate Resist rinse samples scale selectivity shown in Fig shows simulations SiO2 slurry solution species sputtering step substrate surface Table temperature thermal thickness thin trenches various voltage wafer
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Page 3 - The authors would like to thank the National Science Council of the Republic of China for financially supporting this research under Contract No.
Page 175 - JM Calvert, WJ Dressick, CS Dulcey, MS Chen, JH Georger, DA Stenger, TS Koloski, and GS Calabrese, in Polymers for Microelectronics-Resists and Dielectrics, LF Thompson, C.
Page 30 - MC Gilmer, TY Luo, HR Huff, MD Jackson, S. Kim, G. Bersuker, P. Zeitzoff, L. Vishnubhotla, GA Brown, R. Amos, D. Brady, VHC Watt, G. Gale, J. Guan, B. Nguyen, G. Williamson, P. Lysaght, K. Torres, F. Geyling, CFH Gondran, JA Fair, MT Schulberg and T.
Page 30 - Qi, R. Nieh, S. Gopalan, R. Choi and JC Lee, IEDM Tech Digest, 35-37 (2000) 4.
Page 175 - AG Schrott, M. Paunovic, CJ Sambucetti, JR Marino, PJ Bailey, S. Kaja, and KW Semkow, 1BMJ.
Page 29 - The authors gratefully acknowledge the financial support from the National Science Council of the ROC for this work through project NSC 87-22 11 -E020-007.
Page 30 - Lesaicherre, H. Suzuki. A. Sakai, I. Nishiyama and A. Ishitani, J. Electrochem. Soc. 140, 1617 (1993).
Page 29 - CH Lee, HF Luan, WP. Bai, SJ Lee, TS Jeon, Y. Senzaki, D. Roberts, and DL Kwong, "MOS characteristics of ultra thin rapid thermal CVD ZrO2 and Zr silicate gate dielectrics,
Page 22 - Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan, ROC ABSTRACT Zirconia is introduced in Cr203 to inhibit the abnormal grain growth of Cr2O3 during densification.
Page 30 - G. Lucovsky, Y. Wu, H. Niimi, V. Misra, and JC Phillips, Appl. Phys. Lett. 74, 2005 (1999) 1 1 .47.
Bibliographic information
| Title | Thin Film Materials, Processes, and Reliability: Proceedings of the International Symposia Volumes 2001-2024 of Proceedings (Electrochemical Society) |
| Author | Electrochemical Society. Meeting |
| Contributor | International Society of Electrochemistry. Meeting |
| Edition | braille |
| Publisher | The Electrochemical Society, 2001 |
| ISBN | 1566773571, 9781566773577 |
| Length | 216 pages |
| Export Citation | BiBTeX EndNote RefMan |