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Contents
OPTIMIZATION OF SENSOR MATERIALS | 1 |
LOW LEVEL BINARY LIGHT DETECTION IN CHARGE STORAGE PHOTOTRANSISTOR | 10 |
NOISE IN PHOTOTRANSISTORS | 17 |
Copyright | |
8 other sections not shown
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amplifier applied approximately avalanche diodes band bandwidth base bias biased capacitance carrier CdSe characteristics circuitry collector curves density dependence depletion detection detector device diffusion diode display drain current effect electric field element emitter Equation experimental fabricated field effect transistor Figure film frequency GaAs gain gate gauge factor germanium Hg,Cd)Te InAs increase input InSb integrated circuit laser layer leakage current magnetic field magnetoresistive material measured metal mode modulation mosaic MOSFET n-type noise operation optical Opto-Hybrid output voltage p-n junction parameters performance photocurrent Photodiode Array photon photon flux phototransistor PI-FET piezoelectric Pockels cell polarization pulse pyromagnetic quantum efficiency radiation range readout region resistance response sample saturation scanning semiconductor sensitivity sensor shift register shot noise shown in Fig silicon Storage Buffer stress structure substrate surface barrier techniques telemetry thickness threshold tion transducer transistor typical values video signal voltage volts wavelength width