High Brightness Light Emitting Diodes
Academic Press, Feb 9, 1998 - Technology & Engineering - 469 pages
Volume 48in the Semiconductors and Semimetals series discusses the physics and chemistry of electronic materials, a subject of growing practical importance in the semiconductor devices industry. The contributors discuss the current state of knowledge and provide insight into future developments of this important field.
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Chapter 2 Overview of Device Issues in HighBrightness LightEmitting Diodes
Chapter 4 OMVPE Growth of AlGaInP for HighEfficiency Visible LightEmitting Diodes
Chapter 5 AlGaInP LightEmitting Diodes
Chapter 6 Applications for HighBrightness LightEmitting Diodes
active layer AlGaAs AlGaInP AlGaInP LEDs AlGaN AlInGaP alloys ambient angle Appl automotive signal band bandgap energy blue LEDs carrier cavity circuit color concentration conﬁning layers Cryst current-spreading deﬁned density devices diffusion direct bandgap dopant doping efﬁciency electroluminescent Electron emission epitaxial external quantum efﬁciency ﬁrst ﬂow forward current forward voltage function GaAs substrate GaInN gallium nitride GaN ﬁlms green grown growth temperature heterostructure III-V InGaN injection laser laser diodes lattice LED chip LED lamps LED technology Lett light output light source light-emitting diode light-emitting diode LED luminous ﬂux luminous intensity luminous sterance nonradiative optical oxygen p-n junction p-type p-type GaN peak wavelength Phys pixel printed circuit board reactor recombination red LEDs reﬂectivity reﬂector Reprinted from Nakamura room temperature Semiconductors shown in Fig signiﬁcant speciﬁcation SQW LEDs Stringfellow structure surface techniques thermal thickness trafﬁc signal transparent typically wafer wafer-bonded window layer