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Materials and methods
Exploration of Growth Quality
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Additionally AFM images annealing Applied Physics Letters architectures atoms C. S. Lent capping layer thickness chamber Chapter cold-cap configuration contaminants Courtesy of Alan Courtesy of Surajit Created critical layer thickness cryostat denuded zone Depl deposition device edges effects electron ex situ FIB examined focused ion beam function Ga+ dose gate Germanium growth conditions growth of 10ML growth quality growth temperature hot-cap implanted region increases intermixing island formation Journal of Applied lattice Lett lithography lower material MBE system mesa after growth microscopy milling Moore's Law nucleation observed P. D. Tougaw parameters pattern Phys pits PL response polarization preferential QCA-based Quantum cellular automata quantum dots recombination sites scan scatterometry self-assembly semiconductor shape retention shown in Figure shutter SiGe strain energy substrate superlattice Surajit Atha Figure surface surfactant switching technique topological transistors truncation tunneling unit cell vacuum Vandervelde Figure voltage wetting layer