New Trends in Magnetism, Magnetic Materials, and Their Applications
J.L. Morán-López, Juan M. Sanchez
Springer, Nov 30, 1994 - Science - 472 pages
Proceedings of the Second Latin American Workshop on Magnetism, Magnetic Materials, and Their Applications, held in Guanajuato, Mexico, August 1993. Also a Festschrift for Leo Falicov on the occasion of his 60th birthday. The volume is divided into sections devoted to magnetic clusters, one and two-dimensional systems, superlattices and multilayers, surfaces and interfaces, alloys and amorphous materials, special techniques and materials, and general theoretical developments. Annotation c. by Book News, Inc., Portland, Or.
31 pages matching exchange interaction in this book
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Magnetic Optical and ChargeTransfer Spectra
Magnetic Properties of Small Transition Metal
Magnetic Properties of Transition Metal
42 other sections not shown
alloys amorphous anisotropy antiferromagnetic Applications Edited applied approximation atoms average band behavior Bethe bilayer system bonds bulk calculated cluster correlations corresponding critical exponents critical temperature crystal Curie temperature decreases diffraction disorder domains Edited by J.L. effect energy gap equations exchange coupling exchange interaction excitations excitons experimental exponent Falicov Fermi Fermi surface ferromagnetic Figure films finite flip function given Hamiltonian Heisenberg Hubbard model impurity increases interface ions J.L. Moran-Lopez J.M. Sanchez lattice layers Lett low temperature Magn magnetic field Magnetic Materials magnetic moments magnetic phase magnetic properties magnetic susceptibility measurements montmorillonite multilayers nearest neighbors neutron non-magnetic observed obtained paramagnetic particles phase diagram Phys Physics Plenum Press present samples scattering shown in Fig shows solid spacer spin polarization structure sublattice substrate superconducting superlattices surface techniques temperature dependence thermodynamic thickness transition temperature Trends in Magnetism tunneling valence band zero