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A. H. Liang AC stress active area beam BiCMOS bipolar transistor bulk CMOS buried oxide thick calculated Chan channel CMOSN compaction converted copper coated phosphor critical temperature DCEL device depletion depth depletion region depletion width dopant doping electric field Electronic Engineering equations equivalent circuit etching fabricated Fig.l fluid gas sensor gate oxide Gaussian heat transfer heater Hong Kong University I-V characteristics IEEE IEEE Electron Devices IEEE Trans input integrated interface laser diode lateral bipolar layer Lett matrix methodology MFHW definition microchannel MOSFETs n-MOSFETs N20G device nitridation no-slip flow ohmic contacts optical optoelectronic output oxygen tailoring process p-n junction phosphor powder photodetectors photodiode planar single-mode waveguides Process Technology pulse resistance sample Science & Technology semi-insulating semiconductor shown in Figure silicon slip flow SOI/CMOS sparse matrix splice loss substrate surface Technology & Devices thermal thin film trial solution University of Hong University of Science voltage wafer XNOR gate YBCO