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TRANSIENT LASERINDUCED PROCESSES IN
MACROSCOPIC THEORY OF PULSED LASER ANNEALING
EVIDENCE FOR AND NATURE OF A NONTHERMAL
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absorption activation alloy amorphous Appl approximately atoms calculated carrier cells channeling coefficient compared concentration crystal crystalline curve damage defects dependence deposited depth determined device diffusion discussed dislocations distribution dopant doped dose effect electrical electron beam energy density equilibrium experimental experiments FIGURE films formation function GaAs given grain growth heat higher implanted impurity increase indicate intensity interface ion implanted irradiation laser annealing laser irradiation laser pulse layer Lett limit liquid lower material measurements melting metal observed obtained occurs oxide peak phase Phys present Press produced profiles pulse range REFERENCES reflectivity region reported resistance ruby laser samples scan semiconductor shown in Fig shows silicon similar single crystal solid solubility solute spectra structure substrate surface techniques temperature thermal thermal annealing thickness tion trapping values wafers