Low and High Dielectric Constant Materials: Materials Science, Processing, and Reliability Issues : Proceedings of the Fifth International Symposium
Mark J. Lododa, Rajendra Singh
The Electrochemical Society, 2000 - Dielectric devices - 244 pages
Contains papers from a May 2000 symposium, representing the state of the art in areas of dielectric materials science and process integration. Papers are arranged in sections on low and high dielectric constant materials, covering topics such as ammonia plasma passivation effects on properties of post-CMP low-k HSQ, characterization of ashing effects on low-k dielectric films, and electron beam curing of thin film polymer dielectrics. Other subjects include characterization of high-k dielectrics using the non-contact surface charge profiler method, and processing effects and electrical evaluation of ZrO2 formed by RTP oxidation of Zr. Loboda is affiliated with Dow Corning Corporation. c. Book News Inc.
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addition analysis annealing anodized applications as-deposited atoms barrier bonds capacitance capacitors changes characteristics characterized charge chemical chemistries compared conductivity cured decreased deposited devices dielectric constant e-beam effects electrical electrode etch exposure field Figure flow FTIR spectra function gate groups higher HSQ film improved increased indicates integration interconnect International layer leakage current leakage current density low-k lower materials measured mechanical metal method MV/cm observed obtained organic oxide oxygen peak performed physical polishing polymer Post post-CMP HSQ precursor production properties ratio reaction reduced refractive index relative removal reported residual resistance respectively samples Semiconductor shown in Fig shows Si-H SiCOH signal silica silicon similar SiO2 solvent step stress structure substrate surface Table Technology temperature thermal thermally cured thickness thin films transistors voltage wafers ZrO2