Structure and Imperfections in Amorphous and Crystalline Silicon Dioxide
R. A. B. Devine, Roderick A. B. Devine, J.-P. Duraud, E. Dooryhée
Wiley, May 18, 2000 - Science - 505 pages
Structure and Imperfections in Amorphous and Crystalline Silicon Dioxide Edited by R. A. B. Devine, University of New Mexico, USA J.-P. Duraud, ESRF, Grenoble, France and E. Dooryhée, ESRF, Grenoble, France Silicon dioxide is one of the most common naturally occurring materials. Its applications range from nuclear waste storage to optical fibre communications to silicon microelectronics. Experts from America, Europe and Japan have written chapters covering both the amorphous and the crystalline phases of the material with particular reference to its structure and defects. The book is divided into four sections: Topological Models for the Crystalline and Amorphous Phases Electronic Structure Macroscopic and Point Defects Processing and Applications of Crystalline and Amorphous Phases Engineers, researchers and postgraduate students of materials science, physics and engineering will all find this an extremely useful addition to their libraries.
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21 other sections not shown
a-quartz absorption amorphous angle annealing applications associated atoms average band bond bond angle calculations centre charge Chem cluster compared concentration coordination correlation corresponding cristobalite crystal crystalline defects density depends determined discussed distance distribution edge effect electron energy equation et al example excitation experimental experiments fiber Figure formation frequency function glass hole important increase indicated initial interaction irradiation Lett loss material measured methods mode nature neutron node observed obtained optical oscillator oxide oxygen parameters peak phase Phys polymorphs positive possible potential present pressure produced properties quartz radiation range reference relative relaxation resonance rings rules scattering shift shown shows Si-O Si-O-Si silica silicon similar simulations SiO2 Solids spectrum stable structure studies surface Table temperature tetrahedra thermal transition trapped unit vacancy variation X-ray