Charge-coupled Devices and Solid State Optical Sensors: 12-14 February 1990, Santa Clara, California, Volume 1Morley M. Blouke |
Contents
CCD APPLICATIONS AND CHARACTERIZATION | 47 |
FOCAL PLANE IMAGE PROCESSING | 117 |
NEW TECHNOLOGY | 163 |
Copyright | |
3 other sections not shown
Common terms and phrases
1/f noise analog applications array averaging backside Blouke bump bonding buried channel buried-channel camera capacitance CCD Image Sensor charge packet charge transfer efficiency charge-coupled device chip clock dark current detector display drain dynamic range effect electrons exposure fabricated film floating diffusion floating gate focal plane Ford Ford Aerospace frequency horizontal register IEEE illumination image sensor increases input integration Janesick linear measured microns MOSFET node capacitance noise floor operation optical output amplifier output circuit output node performance phase photodiode photon photosite pixel potential Proc Quadrant-CCD quantum efficiency read noise readout noise reduced resolution sampling scan sensitivity serial register shift register shot noise shown in Figure shows signal charge signal level silicon Skipper CCD source follower SPIE structure substrate surface tantalum TDI imager Technology Tektronix temperature transfer gate transistor trap voltage wafer X-ray