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THE MOBILITYDIFFUSION APPROXIMATION
STATISTICS AND KINETICS OF ELECTRONS IN CON
14 other sections not shown
acceptors applied atoms band structure becomes boundary calculated carrier density centres Chapter classical approximation collector collisions conduction band conductor constant curves decrease denotes density of carriers depends diagram diffusion diode discussion donors effective mass electric field electrical constants electrons emitter equation equilibrium expressions factor forbidden band frequency germanium given Hall coefficient Hence high temperatures holes impurity scattering increase independent injection integral intrinsic ionized ions junction kinetic energy layer low temperatures magnetic field material measured metal minority carriers mobility n-type n-type semiconductor negative neglected neighbourhood obtained Ohm's law oxide p-n junction particle particular phonons point contact potential energy properties ratio recombination rectifiers region relation resistance result room temperature samples semiconductor shown in Fig silicon space charge specimens surface theory thermal thermodynamic potential thermoelectric power tion transistor valency band values vanish velocity voltage wave mechanical wave vector width zero