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activation energy analysis Baldinger base current component Base current Ib cent Chemie collector cutoff current const current transfer ratio cutoff current Icbo diffusion component diffusion constant drift of Icbo electrons endommagements exponential law extrapolated field effect forbidden energy gap Gallen gamma irradiated transistors gamma radiation holes Ib increase linearly Icbi independent value induced defects integrated gamma flux integrated neutron flux inversion layer investigated Irgt IRRADIATION AND ANNEALING irradiation induced Isochronal annealing curves l'irradiation gamma l'irradiation par neutrons Lenzlinger lifetime Mathematik measurements minority carrier mobile carriers neutron and gamma neutron damage neutron irradiated transistors observed obtained p-type peuvent fitre photons/cm2 plotted recombination centres recombination level recombination-generation current recuite reverse current Riehen Shockley saturation current silicon crystal silicon planar transistors slow surface space charge surface effect temperature temperature dependence thermally oxidized transistors npn unirradiated Universitat Basel valence band wahrend