Proceedings of the 13th International Conference on Defects in Insulating Materials: ICDIM 96 : July 15-19, 1996, Wake Forest University, Winston-Salem, NC 27109, USAG. Eric Matthews, Richard T. Williams This book constitutes a comprehensive international forum on defect-related phenomena in wide-gap materials, crystalline or otherwise. Materials as diverse as SiO2, group-III nitride compounds, diamond, alkali halides, refractory oxides, and polymers are covered, and the defects considered include intrinsic point imperfections, dislocations, accidental impurities, intentional dopants, imperfect surfaces, nanocrystals in host matrices, and bonding defects in glasses. |
Contents
SiO2 | 1 |
SiO2 | 11 |
Further Study of the Distribution of the Tunneling States in Neutron | 15 |
Copyright | |
73 other sections not shown
Common terms and phrases
absorption absorption band activation alkali annealing appears applied atoms band bond calculated centers changes charge component concentration conductivity configuration constant corresponding crystals curve decay decrease defects density dependence diamond diffusion discussed doped dose effect electric electron emission energy excitation exciton experimental experiments field Figure formation frequency function halides heat higher hole impurity increase indicates induced intensity interaction ions irradiation laser lattice layer leads light lower luminescence materials measured mechanism method mode observed obtained optical oxide oxygen pairs parameters peak photon Phys Physics position possible present produced properties pulse radiation range References region relative relaxation reported respectively samples shift shown shows similar single Solid spectra spectrum structure suggest surface temperature thermal transitions traps University vacancies values wavelength X-ray