Design and Electron Beam Fabrication of Half Micrometer Low Noise GaAs Mesfet's |
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Page 70
... doped contact layer ( 2 x 1018 cm - 3 ) HC1 50 ° C 15 min protect active layer 9.5 x 10.5 mm pieces for EBMF - 2 chuck processing thickness 15 mils B ) STEP MESA ISOLATION PROCESS TITLE Bl Wafer Clean 70 DETAILED PROCESS SEQUENCE.
... doped contact layer ( 2 x 1018 cm - 3 ) HC1 50 ° C 15 min protect active layer 9.5 x 10.5 mm pieces for EBMF - 2 chuck processing thickness 15 mils B ) STEP MESA ISOLATION PROCESS TITLE Bl Wafer Clean 70 DETAILED PROCESS SEQUENCE.
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... PROCESS TITLE Oxide Strip Dehydration Bake PMMA Coat Prebake AuPd Coat Ohmic Level Exposure ( EBL ) AuPd Strip Develop Light Etch DETAILS 1:15 NH OH : H2O 4OH : H20 15 sec blow dry N2 110 ° C 10 min 6 % PMMA ( 950,000 MW ) in ...
... PROCESS TITLE Oxide Strip Dehydration Bake PMMA Coat Prebake AuPd Coat Ohmic Level Exposure ( EBL ) AuPd Strip Develop Light Etch DETAILS 1:15 NH OH : H2O 4OH : H20 15 sec blow dry N2 110 ° C 10 min 6 % PMMA ( 950,000 MW ) in ...
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... PROCESS TITLE Organic Solvent Clean Dehydration Bake AZ1350J Coat DETAILS TCE , acetone , methanol , H2O N2 blow dry ... process to cover resist steps AIRBRIDGES AND PLATING PROCESS TITLE AZ1375 Coat Prebake Expose Plating 76.
... PROCESS TITLE Organic Solvent Clean Dehydration Bake AZ1350J Coat DETAILS TCE , acetone , methanol , H2O N2 blow dry ... process to cover resist steps AIRBRIDGES AND PLATING PROCESS TITLE AZ1375 Coat Prebake Expose Plating 76.
Common terms and phrases
acetone active layer airbridges alignment marks alloy associated gain blow dry bonding pads contact layer contact lithography contact resistance contribution to source device layout doping level drain conductance drain current electron beam lithography electroplated epitaxy equivalent noise temperature evaporation exposed fabrication GaAs MESFET's gate length gate level gate line gate metal gate resistance gate structure gate width ground plane growth H20 rinse IDSS KEY 1 LOC level chip level wafer liftoff LOR 4 E1 MARK JOY MARK JOY KEY mesa level MESFET metal resistance metal sheet resistance MOV FC JOY MWFET N₂ blow dry noise figure noise temperature ohmic contact ohmic level overcut edges parameter performance photoresist PMMA PROCESS TITLE recess depth recessed gate RECT reduced resist layer RMP WAF S-parameters saturation Schottky source resistance spacer resist substrate test pattern transconductance undercut WAFER ALIGNMENT