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Reliability in The Federal Aviation Administration
DISSOLUTION RATES AND RELIABILITY EFFECTS OF Au Ag Nif AND
BONDING DEGRADATION IN THE TANTALUM NITRIDECHROMIUMGOLD
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accelerated aluminum aluminum metallization annealing applied avalanche bias capacitor cause charge spreading chip chromium component conductor crossover current density curve defects degradation deposited determine dielectric diffusion diodes effect electrical electron beam encapsulated energy Engineering epoxy etching evaluation failure analysis failure mechanism failure mode failure rate field plate gate heat sink humidity hybrid IEEE increase indicated integrated circuits interface intermetallic inversion layer ions Laboratory leakage material measured mechanical stress method microscope Nichrome NiCr nitride observed occur operation output oxide steps p-n junction package parameters photoresist plastic potential probe process control pulse region resistance resistors sample scanning electron scanning electron microscope screening shown in Figure shows silicon silicon dioxide solder sputtering step coverage stripe structure substrate surface tantalum taper techniques temperature cycling thermal cycling thickness thin film threshold voltage tion transistors typical volts wafer wire bonds X-ray